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| MIG75Q6CSB1X MITSUBISHI SEMICONDUCTOR MIG75Q6CSB1X (1200V/75A 6in1) High Power Switching Applications Motor Control Applications * * * * Integrates inverter and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package. The electrodes are isolated from case. VCE (sat) = 2.2 V (typ.) UL recognized: File No. E87989 Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT W 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. FO (U) VD (W) Open 3. 10. 17. V IN (U) FO (W) IN (X) 4. 11. 18. U GND (U) IN (W) IN (Y) 5. 12. 19. VD (V) GND (W) IN (Z) B 6. 13. 20. FO (V) VD (L) N 7. 14. IN (V) FO (L) P GND (L) 2004-10-01 1/10 MIG75Q6CSB1X Package Dimensions Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) Open 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2004-10-01 2/10 MIG75Q6CSB1X Signal Terminal Layout Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) Open 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2004-10-01 3/10 MIG75Q6CSB1X Maximum Ratings (Tj = 25C) Stage Characteristic Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Storage temperature range Module Isolation voltage Screw torque (terminal) Screw torque (mounting) AC 1 minute M4 M5 Tc = 25C, DC Tc = 25C, DC Tc = 25C VD-GND terminal IN-GND terminal FO-GND terminal FO sink current Condition P-N power terminal Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO Tc Tstg VISO Ratings 900 1200 75 75 830 150 20 20 20 14 -20 to 100 -40 to 125 2500 2 3 Unit V V A A W C V V V mA C C V N*m N*m Electrical Characteristics 1. Inverter Stage Characteristic Collector cut-off current Symbol ICEX Test Condition VCE = 1200 V VD = 15 V, IC = 75 A, VIN = 15 V 0 V IF = 75 A, Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min VCC = 600 V, IC = 75 A, VD = 15 V, VIN = 15 V 0 V, Tj = 25C, Inductive load (Note 1) Typ. 2.2 2.4 2.0 0.3 0.3 1.5 0.4 Max 1 10 2.6 V 3.0 2.8 3.0 2.5 s V Unit mA Collector-emitter saturation voltage Forward voltage VCE (sat) VF ton tc (on) Switching time trr toff tc (off) Note 1: Switching time test circuit and timing chart. 2004-10-01 4/10 MIG75Q6CSB1X 2. Control Stage (Tj = 25C) Characteristic Control circuit current Input-on signal voltage Input-off signal voltage Protection Fault output current Normal Over current protection trip level Short-circuit current protection trip level Over current cut-off time Over temperature protection Control supply under voltage protection Fault output pulse width Trip level Reset level Trip level Reset level Inverter Inverter High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC SC toff (OC) OT OTr UV UVr tFO VD = 15 V VD = 15 V VD = 15 V VD = 15 V VD = 15 V VD = 15 V, Tj < 125C = VD = 15 V, Tj < 125C = VD = 15 V Case temperature Test Condition Min 1.4 2.2 8 120 120 110 11.0 12.0 1 Typ. 13 39 1.6 2.5 10 5 118 98 12.0 12.5 2 Max 17 51 1.8 2.8 12 mA 0.1 125 12.5 13.0 3 ms A A s C V V Unit mA V 3. Thermal Resistance (Tc = 25C) Characteristic Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Inverter IGBT stage Inverter FRD stage Compound is applied Min Typ. 0.017 Max 0.15 0.35 C/W Unit C/W 2004-10-01 5/10 MIG75Q6CSB1X Switching Time Test Circuit Intelligent power module TLP559 (IGM) VD 0.1 F 15 k OUT IN 15 V 22 F GND VS P GND U (V, W) VCC VD IF = 16 mA PG 15 V 22 F GND 0.1 F 15 k OUT IN VS N GND Timing Chart Input Pulse 15 V VIN Waveform 0 2.5 V 1.6 V 90% Irr IC Waveform Irr 90% trr 20% Irr VCE Waveform 10% 10% tc (off) 10% 10% tc (on) toff ton 2004-10-01 6/10 MIG75Q6CSB1X 4. Recommended conditions for application Characteristic Supply voltage Control supply voltage Carrier frequency Dead time Symbol VCC VD fc tdead Test Condition P-N Power terminal VD-GND Signal terminal PWM Control Switching time test circuit (see page.6) (Note 2) Min 13.5 3 Typ. 600 15 Max 800 16.5 20 Unit V V kHz s Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 2004-10-01 7/10 MIG75Q6CSB1X IC - VCE 150 150 IC - VCE IC (A) VD = 17 V 100 IC (A) VD = 15 V VD = 15 V VD = 17 V 100 VD = 13 V Collector current 50 Collector current VD = 13 V 50 Common emitter Tj = 25C 0 0 1 2 3 4 5 0 0 1 2 3 Common emitter Tj = 125C 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Switching time - IC 10 10 Switching time - IC 3 ton toff tc (off) 3 ton toff (s) 1 (s) 1 tc (off) tc (on) Switching time 0.3 Switching time tc (on) 0.3 0.1 Tj = 25C 0.03 VCC = 600 V VD = 15 V L-LOAD 10 20 30 40 50 60 70 80 0.1 Tj = 125C 0.03 VCC = 600 V VD = 15 V L-LOAD 10 20 30 40 50 60 70 80 0.01 0 0.01 0 Collector current IC (A) Collector current IC (A) IF - VF 150 100 trr, Irr - IF Peak reverse recovery current Irr (A) Reverse recovery time trr (x10 nS) 5 3 Irr (A) Forward current IF 100 10 trr 50 Common cathode : Tj = 25C : Tj = 125C 0 0 1 2 3 4 5 5 3 Common cathode : Tj = 25C 1 0 : Tj = 125C 10 20 30 40 50 60 70 80 Forward voltage VF (V) Forward current IF (A) 2004-10-01 8/10 MIG75Q6CSB1X OC - Tc ID (H) (mA) 200 25 ID (H) - fc (A) OC Inverter stage 150 20 Over current protection trip level High side control circuit current 15 100 10 50 5 VD = 15 V 0 0 5 10 15 20 25 VD = 15 V 0 0 25 50 75 100 125 150 Case temperature Tc (C) Carrier frequency fc (kHz) ID (L) - fc 80 140 OC 120 60 Reverse bias SOA ID (L) (mA) IC (A) 100 Low side control circuit current 40 Collector current 80 60 20 40 20 Tj < 125C = VD = 15V VD = 15 V 0 0 5 10 15 20 25 0 0 200 400 600 800 1000 1200 1400 Carrier frequency fc (kHz) Collector-emitter voltage VCE (V) Rth (t) - tw Inverter stage 10 TC = 25C Transient thermal resistance Rth (t)/(C/W) 1 Diode stage 0.1 Transistor stage 0.01 0.001 0.01 0.1 1 10 Pulse width tw (s) 2004-10-01 9/10 MIG75Q6CSB1X Turn on loss - IC 100 100 Turn off loss - IC Eon (mJ) 10 Eoff (mJ) 10 Turn on loss 1 Turn off loss VCC = 600 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 10 20 30 40 50 60 70 80 1 VCC = 600 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 10 20 30 40 50 60 70 80 0 0 0 0 Collector current IC (A) Collector current IC (A) 2004-10-01 10/10 |
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